BAV70LT1中文资料_ddosrst1中文资料

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LESHAN RADIO COMPANY, LTD.Monolithic Dual Switching Diode Common Cathode共阴极单片双开关二极管

BAV70LT1

3ANODE

阳极

CATHODE

阴极

ANODE

阳极

CASE 318-08, STYLE9 SOT-23(TO-236AB)

DEVICE MARKING器件标识

BAV70LT1 = A4

MAXIMUM RATINGS(EACH DIODE)最大额定值

Rating

Reverse Voltage反向电压 Forward Current正向电流

Peak Forward Surge Current正向浪涌电流峰值

Symbol V R I F I FM(surge)

Value 70 200 500

Unit Vdc mAdc mAdc

THERMAL CHARACTERISTICS热特性

Characteristic

Symbol

Max 225 1.8 556 300 2.4 417-55 to +150

Unit mW mW/°C °C/W mW mW/°C °C/W °C

Total Device Diipation FR-5 Board(1)P D

T A = 25°C

Derate above 25°CFR – 5板的器件总功耗 Thermal Resistance, Junction to Ambient R θJA Total Device Diipation P D Alumina Substrate,(2)T A = 25°C Derate above 25°C氧化铝基板的器件总功耗

R θJA Thermal Resistance, Junction to Ambient热阻，结到环境

T J , T stg Junction and Storage Temperature结温和存储温度

ELECTRICAL CHARACTERISTICS(T A = 25°C unle otherwise noted)(EACH DIODE)电气特性

Characteristic

Symbol

Min

Max

Unit

—

Vdc µAdc

—

———

2.5 100 1.5

pF mVdc

—————

715 855 1000 1250 6.0

ns

OFF CHARACTERISTICS开关特性

Reverse Breakdown Voltage反向击穿电压

V(BR)

(I(BR)= 100 µAdc)

Reverse Voltage Leakage Current反向漏电流电压 I R(V R = 25 Vdc, T J = 150°C)(V R = 70 Vdc)

(V R = 70 Vdc, T J = 150°C)

Diode Capacitance二极管电容

C D

(V R = 0, f = 1.0 MHz)

Forward Voltage正向电压 V F(I F = 1.0 mAdc)(I F = 10 mAdc)(I F = 50 mAdc)(I F = 150 mAdc)

Reverse Recovery Time反向恢复时间 R L = 100 Ω

t rr

(I F = I R = 10 mAdc, V R = 5.0 Vdc, I R(REC)= 1.0 mAdc)(Figure 1)

1.FR-5 = 1.0 x 0.75 x 0.062 in.2.Alumina = 0.4 x 0.3 x 0.024 in.99.5% alumina.G5-1/1